Electrical Characterization of the Clamping Behavior on CMOS Quasi-Floating-Gate Circuits.

  • Published In: Journal of Circuits, Systems & Computers, 2024, v. 33, n. 4. P. 1 1 of 3

  • Database: Academic Search Ultimate 2 of 3

  • Authored By: Molinar-Solis, Jesus E.; Sanchez-Arias, Daniel; Fajardo-Delgado, Daniel; Ocampo-Hidalgo, Juan J.; Padilla-Cantoya, Ivan 3 of 3

Abstract

In this paper, the clamping effect introduced by several diode-based configurations used for the implementation of the high-value resistors in quasi-floating-gate circuits is analyzed and characterized. In contrast to previous approaches where a parasitic diode is treated as a simple high-value resistor reducing the circuit complexity, in this case the analysis considers the diode behavior which leads to a clamping circuit. This clamping circuit introduces an unwanted amplitude-dependent offset voltage, which affects the performance moving the quiescent point at the quasi-floating-gate transistors. A new anti-parallel diode configuration for quasi-floating-gate applications is proposed in this work, which eliminates this unwanted offset voltage. The proposed design is validated using simulations and experimental data in a CMOS 0.35- μ m technology. [ABSTRACT FROM AUTHOR]

Additional Information

  • Source:Journal of Circuits, Systems & Computers. 2024/03, Vol. 33, Issue 4, p1
  • Document Type:Article
  • Subject Area:Engineering
  • Publication Date:2024
  • ISSN:0218-1266
  • DOI:10.1142/S0218126624500683
  • Accession Number:176107752
  • Copyright Statement:Copyright of Journal of Circuits, Systems & Computers is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

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